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Transmission electron microscopy (TEM) characterisation of Ru2Si3 thin films formed by solid state reaction of Ru and Si

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conference contribution
posted on 2017-12-06, 00:00 authored by Kin Hung Pang, M Blackford, E Jelenkovic
Transmission electron microscopy investigation on Ru2Si3 thin films formed by solid state reaction of Ru and Si revealed a top layer of SiO2 with embedded Ru clusters. We attribute the formation of the top layer to the oxidation between residual oxygen traces in the nitrogen and the silicon in Ru2Si3 grains. The observation is in agreement with electrical measurements. In addition, an interlayer, which has complex structure and chemistry, was observed between the film and substrate.

Funding

Category 1 - Australian Competitive Grants (this includes ARC, NHMRC)

History

Parent Title

17th AINSE Conference on Nuclear and Complementary Techniques of Analysis (NCTA 2012) & 10th Vacuum Society of Australia Congress, Australian National University, Canberra, Australia, 5-7 December 2012.

Start Page

1

End Page

4

Number of Pages

4

Start Date

2011-01-01

Location

Australian National University, Canberra, Australia

Publisher

AINSE

Place of Publication

Australia

Peer Reviewed

  • No

Open Access

  • No

Era Eligible

  • No

Name of Conference

Vacuum Society of Australia. Congress;AINSE. Conference on Nuclear and Complementary Techniques of Analysis

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    Keywords

    Transmission electron microscopy (TEM)Ru2Si3Materials Engineering not elsewhere classified

    Licence

    CQUniversity General 1.0

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